集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
集电极连续输出电流IC Collector Current(IC) | 100mA/0.1A |
截止频率fT Transtion Frequency(fT) | 100MHz |
直流电流增益hFE DC Current Gain(hFE) | 120~270 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | 200mV/0.2V |
耗散功率Pc Power Dissipation | 150mW/0.15W |
Description & Applications | NPN general purpose transistor FEATURES • Low current • Low voltage APPLICATIONS • General purpose switching and amplification in communication, electronic data processing (EDP) and consumer applications. |
描述与应用 | NPN通用晶体管 特点 •低电流 •低电压 应用 •通用开关和放大通信,电子数据处理(EDP)和消费类应用。 |