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Parameters:

  • Model:2SA1163
  • Manufacturer:HUABAN
  • Date Code:05+ 05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:CL
  • Package:SOT-23/SC-59

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-120V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
-120V
集电极连续输出电流IC
Collector Current(IC)
−100mA/-0.1A
截止频率fT
Transtion Frequency(fT)
100MHz
直流电流增益hFE
DC Current Gain(hFE)
350~700
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-300mV/-0.3V
耗散功率Pc
PoWer Dissipation
150mW/0.15W
Description & Applications audio frequency general purpose amplifier applications Features • TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) • High voltage : VCEO = −120 V • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) • High hFE: hFE = 200~700 • Low noise: NF = 1dB (typ.), 10dB (max) • Complementary to 2SC2713 • Small package APPLICATIONS • Audio Frequency General Purpose Amplifier Applications
描述与应用 音频通用放大器应用 特点 •TOSHIBA晶体管的硅PNP外延式(PCT的进程) •高电压VCEO=-120V •优秀HFE线性:HFE(IC= -0.1毫安)/ HFE(IC=-2毫安)=0.95(典型值) •高HFE:HFE= 200〜700 •低噪音:NF=1分贝(典型值),10分贝(最大) •互补2SC2713 •小型封装 应用 •音频通用放大器应用

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SA1163
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