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Parameters:

  • Model:2SA1203
  • Manufacturer:HUABAN
  • Date Code:11+1krohs 05+
  • Standard Package:1000
  • Min Order:10
  • Mark/silk print/code/type:HY
  • Package:SOT-89/SC-62

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-30V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−30V
集电极连续输出电流IC
Collector Current(IC)
-1.5A
截止频率fT
Transtion Frequency(fT)
120MHz
直流电流增益hFE
DC Current Gain(hFE)
160~320
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-2V
耗散功率Pc
PoWer Dissipation
500mW/0.5W
Description & ApplicationsSilicon PNP Epitaxial Type (PCT process) suitable for output stage of 3 watts amplifier; PC=1~2w; small flat package; complementary to 2SC2883
描述与应用硅PNP外延式(PCT的进程) 适用于3瓦放大器的输出级; PC= 1〜2W; 小扁平封装; 2SC2883互补

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SA1203
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