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Parameters:

  • Model:2SA1235A
  • Manufacturer:HUABAN
  • Date Code:05+ 05+ROHS
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:MF
  • Package:SOT-23/SC-59

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-60V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−50V
集电极连续输出电流IC
Collector Current(IC)
−200mA/-0.2A
截止频率fT
Transtion Frequency(fT)
180MHz
直流电流增益hFE
DC Current Gain(hFE)
250~500
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-300mV/-0.3V
耗散功率Pc
PoWer Dissipation
200mW/0.2W
Description & Applications Plastic-Encapsulated Transistors FEATURES Power dissipation PCM : 0.2 W (Tamb=25℃) Collector current ICM : -0.2 A Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃
描述与应用 塑料封装晶体管 特点            功耗                         PCM:0.2 W(T环境温度= 25℃)    集电极电流                         ICM:-0.2à    集电极 - 基极电压                         V(BR)CBO:-60 V    操作和存储结温范围                         TJ,TSTG:-55℃至+150℃

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SA1235A
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