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Parameters:

  • Model:2SA1252
  • Manufacturer:HUABAN
  • Date Code:05+ 05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:D6
  • Package:SOT-23/CP

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-60V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−50V
集电极连续输出电流IC
Collector Current(IC)
−150mA/-0.15A
截止频率fT
Transtion Frequency(fT)
100MHz
直流电流增益hFE
DC Current Gain(hFE)
200~400
管压降VCE(sat)
Collector-Emitter SaturationVoltage
−500mV/-0.5V
耗散功率Pc
PoWer Dissipation
200mW/0.2W
Description & ApplicationsPNP/NPN Epitaxial planar silicon transistors For AF applications high Vebo; wide ASO and high durability against breakdown
描述与应用PNP/ NPN外延平面硅晶体管 对于AF应用 高VEBO; 宽的ASO和高耐久性反对击穿

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SA1252
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