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Parameters:

  • Model:2SA1384
  • Manufacturer:HUABAN
  • Date Code:12+1k rohs 07+
  • Standard Package:1000
  • Min Order:10
  • Mark/silk print/code/type:JO
  • Package:SOT-89/SC-62

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
−300V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−300V
集电极连续输出电流IC
Collector Current(IC)
−100mA/-0.1A
截止频率fT
Transtion Frequency(fT)
70MHz
直流电流增益hFE
DC Current Gain(hFE)
50~150
管压降VCE(sat)
Collector-Emitter SaturationVoltage
−500mV/-0.5V
耗散功率Pc
PoWer Dissipation
500mW/0.5W
Description & Applications Silicon PNP Triple Diffused Type (PCT process) HIGH Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = −300 V, VCEO = −300 V • Low saturation voltage: VCE (sat) = −0.5 V (max) • Small collector output capacitance: Cob = 6 pF (typ.) • Complementary to 2SC3515 • Small flat package • PC = 1.0 to 2.0 W (mounted ceramic substrate)
描述与应用 PNP硅三重扩散类型(PCT程序) 高电压控制应用 等离子显示器,数码管驱动器应用 阴极射线管的亮度控制应用 •高电压:VCBO=-300 V VCEO=-300 V •低饱和电压VCE(星期六)=-0.5 V(最大值) •小集电极输出电容:COB= 6 PF(典型值) •互补2SC3515

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SA1384
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