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Parameters:

  • Model:2SA1575
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:1000
  • Min Order:10
  • Mark/silk print/code/type:AF
  • Package:SOT-89/PCP/SC-62

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-200V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
-200V
集电极连续输出电流IC
Collector Current(IC)
−100mA/-0.1A
截止频率fT
Transtion Frequency(fT)
400MHz
直流电流增益hFE
DC Current Gain(hFE)
20
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-1000mV/-1V
耗散功率Pc
PoWer Dissipation
500mW/0.5W
Description & ApplicationsPNP/NPN Epitaxial planar silicon transistors High frequency amp wide band amp high fT; high breakdown voltage; small reverse transfer capacitance and excellent high-frequency characteristic; adoption of FBET process
描述与应用PNP/ NPN外延平面硅晶体管 高频放大器 宽带放大器 高频率; 击穿电压高; 小反向传输电容和优异的高频特性; 采用FBET过程

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SA1575
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