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Parameters:

  • Model:2SA1728-4
  • Manufacturer:HUABAN
  • Date Code:05+ 06+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:DS4
  • Package:SOT-23/CP

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-50V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−40V
集电极连续输出电流IC
Collector Current(IC)
−500mA/-0.5A
截止频率fT
Transtion Frequency(fT)
350MHz
直流电流增益hFE
DC Current Gain(hFE)
100~200
管压降VCE(sat)
Collector-Emitter SaturationVoltage
−200mV/-0.2V
耗散功率Pc
PoWer Dissipation
200mW/0.2W
Description & ApplicationsPNP Epitaxial planar silicon transistor High-speed switching applications adoption of FBET process; low collector-to-emitter saturation voltage; fast switching speed
描述与应用PNP外延平面硅晶体管 高速开关应用 采纳的FBET过程; 低集电极 - 发射极饱和电压; 开关速度快

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SA1728-4
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