集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | −60V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | −50V |
集电极连续输出电流IC
Collector Current(IC) | −100mA/-0.1A |
截止频率fT
Transtion Frequency(fT) | 140MHz |
直流电流增益hFE
DC Current Gain(hFE) | 120~560 |
管压降VCE（sat）
Collector-Emitter SaturationVoltage | −500mV/-0.5V |
耗散功率Pc
PoWer Dissipation | 150mW/0.15W |
| Description & Applications | General Purpose Transistor Features • Reduces Board Space • High hFE, 210−460 (typical) • Low VCE(sat) < 0.5 V • Available in 8 mm, 7−inch/3000 Unit Tape and Reel |
| 描述与应用 | 通用晶体管 特点 •缩小板级空间 •高HFE，210-460（典型值） •低VCE（sat）<0.5 V |