集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | −60V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | −50V |
集电极连续输出电流IC
Collector Current(IC) | −100mA/-0.1A |
截止频率fT
Transtion Frequency(fT) | 180MHz |
直流电流增益hFE
DC Current Gain(hFE) | 200~400 |
管压降VCE（sat）
Collector-Emitter SaturationVoltage | -180mV/-0.18V |
耗散功率Pc
PoWer Dissipation | 200mW/0.2W |
| Description & Applications | PNP SILICON EPITAXIAL TRANSISTOR FEATURES • High DC current gain: hFE2 = 200 TYP. • High voltage: VCEO = −50 V • Can be automatically mounted |
| 描述与应用 | PNP硅外延晶体管 特点 •高直流电流增益：HFE2=200 TYP。 •高电压：VCEO=-50 V •可自动安装 |