集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | -30V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | −20V |
集电极连续输出电流IC
Collector Current(IC) | -1.5A |
截止频率fT
Transtion Frequency(fT) | 170MHz |
直流电流增益hFE
DC Current Gain(hFE) | 160~560 |
管压降VCE（sat）
Collector-Emitter SaturationVoltage | −150mV/-0.15V |
耗散功率Pc
PoWer Dissipation | 400mW/0.4W |
| Description & Applications | PNP Silicon epitaxial planar type For DC-DC converter Features • Low collector to emitter saturation voltage VCE(sat) • Mini3-G1 type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing |
| 描述与应用 | PNP硅外延平面型 用于DC-DC转换器 特点 •低集电极到发射极饱和电压VCE（SAT） •迷你型3-G1型包装，使小型化和薄型化的设备和自动插入磁带通过包装 |