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Parameters:

  • Model:2SB1001BJ
  • Manufacturer:HUABAN
  • Date Code:05+ 05+
  • Standard Package:1000
  • Min Order:10
  • Mark/silk print/code/type:`BJ
  • Package:SOT-89/SC-62

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
−20V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
-16V
集电极连续输出电流IC
Collector Current(IC)
-2A
截止频率fT
Transtion Frequency(fT)
150MHz
直流电流增益hFE
DC Current Gain(hFE)
160~320
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-300mV/-0.3V
耗散功率Pc
PoWer Dissipation
1W
Description & ApplicationsPNP Silicon epitaxial planar type Application • Low frequency power amplifier • Complementary pair with 2SD1367
描述与应用PNP硅外延平面型 应用 •低频功率放大器 •互补配对2SD1367

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SB1001BJ
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