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Parameters:

  • Model:2SB1073-R
  • Manufacturer:HUABAN
  • Date Code:05+12knopb 05+rohs
  • Standard Package:1000
  • Min Order:10
  • Mark/silk print/code/type:IR
  • Package:SOT-89/SC-62

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-30V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−20V
集电极连续输出电流IC
Collector Current(IC)
-4A
截止频率fT
Transtion Frequency(fT)
120MHz
直流电流增益hFE
DC Current Gain(hFE)
120~205
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-1000mV/-1V
耗散功率Pc
PoWer Dissipation
1W
Description & ApplicationsPNP Silicon epitaxial planar transistor For low-frequency amplification Features Low collector to emitter saturation voltage Large peak collector current ICP Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
描述与应用PNP硅外延平面晶体管 对于低频放大 特点 集电极到发射极饱和电压低 大峰值集电极电流ICP 迷你功率型封装,允许瘦身带包装盒包装的设备和通过自动插入。

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SB1073-R
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