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Parameters:

  • Model:2SB1216S
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:700
  • Min Order:10
  • Mark/silk print/code/type:B1216
  • Package:TO-252/DPAK/TP-FA

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-120V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−100V
集电极连续输出电流IC
Collector Current(IC)
-4A
截止频率fT
Transtion Frequency(fT)
130MHz
直流电流增益hFE
DC Current Gain(hFE)
140~280
管压降VCE(sat)
Collector-Emitter SaturationVoltage
−500mV/-0.5V
耗散功率Pc
PoWer Dissipation
1W
Description & ApplicationsPNP Silicon epitaxial planar transistor High current switching applications Applications Relay drivers ,high speed inverters,converters,and other general high current switching applications Feature Low collector-to-emitter saturation voltage high fT Excellent linearity of hFE Fast switching time
描述与应用PNP硅外延平面晶体管 高电流开关应用 应用 继电器驱动器,高速逆变器,转换器,及其他一般高电流开关应用 特点 低集电极 - 发射极饱和电压 高FT 出色的线性度HFE 快速开关时间

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2SB1216S
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