集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | -60V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | −60V |
集电极连续输出电流IC
Collector Current(IC) | -3A |
截止频率fT
Transtion Frequency(fT) | 5MHz |
直流电流增益hFE
DC Current Gain(hFE) | 100~400 |
管压降VCE（sat）
Collector-Emitter SaturationVoltage | -1000mV/-1V |
耗散功率Pc
PoWer Dissipation | 1W |
| Description & Applications | Silicon Power Transistors High speed switching Features DC current gain is high. There is a Z type as a surface-mount products. |
| 描述与应用 | 硅功率晶体管 高速开关 特点 直流电流增益高。 有一个Z型作为表面贴装产品。 |