Please log in first
Home
Cart0

×

Parameters:

  • Model:2SB798
  • Manufacturer:HUABAN
  • Date Code:05+NOPB35
  • Standard Package:1000
  • Min Order:10
  • Mark/silk print/code/type:DM
  • Package:SOT-89/SC-62

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-30V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−25V
集电极连续输出电流IC
Collector Current(IC)
-1A
截止频率fT
Transtion Frequency(fT)
110MHz
直流电流增益hFE
DC Current Gain(hFE)
90~180
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-250mV/-0.25V
耗散功率Pc
PoWer Dissipation
2W
Description & Applications PNP silicon epitaxial transistor power mini mold low collector saturation voltage; excellent DC current gain linearity; complementary to 2SD999
描述与应用 PNP硅外延晶体管电源小型模具 低集电极饱和电压; 优良的直流电流增益线性度; 2SD999互补

×

Online inquiry:

* From:
To:
ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
Product:
2SB798
*Title:
Message:
*Code: