集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | −50V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | −40V |
集电极连续输出电流IC
Collector Current(IC) | -1.5A |
截止频率fT
Transtion Frequency(fT) | 150MHz |
直流电流增益hFE
DC Current Gain(hFE) | 80~220 |
管压降VCE（sat）
Collector-Emitter SaturationVoltage | -1000mV/-1V |
耗散功率Pc
PoWer Dissipation | 10W |
| Description & Applications | Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD1295 ■ Features • Possible to solder radiation fin directly to printed circuit board • High collector-emitter voltage (Base open) VCEO • Large collector power dissipation PC |
| 描述与应用 | PNP硅外延平面型 低频输出放大 互补2SD1295 ■特点 •可直接焊散热片到印刷电路板 •高集电极 - 发射极电压（基本打开）VCEO •大集电极功耗PC |