集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 30V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 20V |
集电极连续输出电流IC
Collector Current(IC) | 30mA |
截止频率fT
Transtion Frequency(fT) | 300MHz |
直流电流增益hFE
DC Current Gain(hFE) | 70~140 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 100mV/0.1V |
耗散功率Pc
Power Dissipation | 200mW/0.2W |
| Description & Applications | NPN Silicon epitaxial planar type For high-frequency amplification Complementary to 2SA1022 Features High transition frequency fT. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. |
| 描述与应用 | NPN硅外延平面型 对于高频放大 互补2SA1022 特点 高转换频率FT。 迷你型包装，让瘦身带包装盒包装的设备和通过自动插入。 |