集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 40V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 25V |
集电极连续输出电流IC
Collector Current(IC) | 50mA |
截止频率fT
Transtion Frequency(fT) | 300MHz |
直流电流增益hFE
DC Current Gain(hFE) | 82~180 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 300mV/0.3V |
耗散功率Pc
Power Dissipation | 200mW/0.2W |
| Description & Applications | High-frequency Amplifier Transistor Features Low collector capacitance. Low rbb, high gain, and excellent noise characteristics. |
| 描述与应用 | 高频晶体管放大器 特点 低集热电容。 RBB低，高增益和优良的噪音特性。 |