集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 60V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 50V |
集电极连续输出电流IC
Collector Current(IC) | 150mA/0.15A |
截止频率fT
Transtion Frequency(fT) | 80MHz |
直流电流增益hFE
DC Current Gain(hFE) | 200~400 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 250mV/0.25V |
耗散功率Pc
Power Dissipation | 150mW/0.15W |
| Description & Applications | NPN Silicon epitaxial Transistors
. Audio frequency general purpose amplifier applications.
Features:
. High voltage and high current
. Excellent hFE linearity
. High hFE
. Low noise
. Small package
. Complementary to 2SA1162 |
| 描述与应用 | NPN硅外延晶体管, 音频通用放大器.
特点: 高电压和高电流, 优秀HFE线性, 高HFE, 低噪音 小型封装, 互补2SA1162. |