集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 50V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 50V |
集电极连续输出电流IC
Collector Current(IC) | 2A |
截止频率fT
Transtion Frequency(fT) | 120MHz |
直流电流增益hFE
DC Current Gain(hFE) | 70~140 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 500mV/0.5V |
耗散功率Pc
Power Dissipation | 500mW/0.5W |
| Description & Applications | NPN Silicon epitaxial Transistors Power amplifier applications Voltage amplifier applications Features Low saturation voltage High speed switching time High transition frequency Small flat package Complementary to 2SA1213 |
| 描述与应用 | NPN硅外延晶体管 功率放大器的应用 电压放大器的应用 特点 低饱和电压 高速开关时间 高转换频率 小扁平封装 互补型2SA1213 |