集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 330V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 200V |
集电极连续输出电流IC
Collector Current(IC) | 2A |
截止频率fT
Transtion Frequency(fT) | |
直流电流增益hFE
DC Current Gain(hFE) | 20~160 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 1V |
耗散功率Pc
Power Dissipation | 2W |
| Description & Applications | NPN Silicon epitaxial Transistors For high speed switching,especially in Hybrid integrated circuits. High voltage |
| 描述与应用 | NPN硅外延晶体管 对于高速交换，尤其是在混合集成电路。 高压 |