集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 30V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 25V |
集电极连续输出电流IC
Collector Current(IC) | 30mA |
截止频率fT
Transtion Frequency(fT) | 200MHz |
直流电流增益hFE
DC Current Gain(hFE) | 55~110 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 300mV/0.3V |
耗散功率Pc
Power Dissipation | 150mW/0.15W |
| Description & Applications | NPN Silicon epitaxial Transistors For high frequency amplify ,oscillating, frequency exchange,medium frequency amplify applications Features High gain Low noise super mini package for easy mounting. |
| 描述与应用 | NPN硅外延晶体管 对于高频放大，振荡频率交换，中频放大应用 特点 高增益 低噪音 易于安装的超小型封装。 |