集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 180V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 160V |
集电极连续输出电流IC
Collector Current(IC) | 80mA |
截止频率fT
Transtion Frequency(fT) | 150MHz |
直流电流增益hFE
DC Current Gain(hFE) | 135~270 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 700mV/0.7V |
耗散功率Pc
Power Dissipation | 200mW/0.2W |
| Description & Applications | NPN Silicon epitaxial Transistors High-voltage switching, AF power Amp,100w output predriver applications Features Small-sized package permitting the 2SC3361-applied sets to be made small and slim. High breakdown voltage Small output capacitance Complementary to 2SA1257 |
| 描述与应用 | NPN硅外延晶体管 高压开关，自动对焦放大器，100W输出功率前置驱动器应用 特点 小型包装允许2SC3361应用设置小型和超薄。 高击穿电压 小的输出电容 互补型2SA1257 |