集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 25V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 20V |
集电极连续输出电流IC
Collector Current(IC) | 30mA |
截止频率fT
Transtion Frequency(fT) | 750MHz |
直流电流增益hFE
DC Current Gain(hFE) | 60~120 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | |
耗散功率Pc
Power Dissipation | 150mW/0.15W |
| Description & Applications | NPN Silicon epitaxial Transistors High frequency general-purpose Amp applications features FBET series compact package enabling compactness of sets High fT and small Cre |
| 描述与应用 | NPN硅外延晶体管 高频通用放大器应用 特点 FBET系列 紧凑的封装，使紧凑套 高FT和小的Cre |