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Parameters:

  • Model:2SC3356
  • Manufacturer:HUABAN
  • Date Code:05+ 05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:R25
  • Package:SOT-23/SC-59

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
20V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
12V
集电极连续输出电流IC
Collector Current(IC)
100mA/0.1A
截止频率fT
Transtion Frequency(fT)
7GHz
直流电流增益hFE
DC Current Gain(hFE)
125~250
管压降VCE(sat)
Collector-Emitter Saturation Voltage
10V
耗散功率Pc
Power Dissipation
200mW/0.2W
Description & Applications MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3357 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current characteristic. FEATURES • Low Noise and High Gain • High power gain
描述与应用 微波低噪声放大器 NPN硅外延晶体管 说明 2SC3357 NPN硅外延晶体管设计的低噪声放大器在VHF,UHF和CATV频带。它具有大动态范围和良好的流动特性。 特点 •低噪声和高增益 •高功率增益

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SC3356
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