集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 60V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 50V |
集电极连续输出电流IC
Collector Current(IC) | 150mA/0.15A |
截止频率fT
Transtion Frequency(fT) | 100MHz |
直流电流增益hFE
DC Current Gain(hFE) | 135~270 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 400mV/0.4V |
耗散功率Pc
Power Dissipation | 150mW/0.15W |
| Description & Applications | NPN Silicon epitaxial Transistors High-Speed Switching Applications Features · Fast switching speed. · High breakdown voltage. · Small-sized package permitting the 2SC3361-applied sets to be made small and slim. Complementary to 2SA1331 |
| 描述与应用 | NPN硅外延晶体管 高速开关应用 特点 ·快速开关速度。 ·高击穿电压。 ·小型封装允许2SC3361应用设置小型和超薄。 互补型2SA1331 |