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Parameters:

  • Model:2SC3554
  • Manufacturer:HUABAN
  • Date Code:06+ 05+
  • Standard Package:1000
  • Min Order:10
  • Mark/silk print/code/type:SL
  • Package:SOT-89

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
300V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
200V
集电极连续输出电流IC
Collector Current(IC)
200mA/0.2A
截止频率fT
Transtion Frequency(fT)
50MHz
直流电流增益hFE
DC Current Gain(hFE)
100~200
管压降VCE(sat)
Collector-Emitter Saturation Voltage
1.5V
耗散功率Pc
Power Dissipation
2W
Description & Applications NPN SILICON EPITAXIAL TRANSIStOR Description High Voltage Switching,especially in Hybrid integrated circuits. Features world standard miniature package High voltage
描述与应用 NPN硅外延晶体管 描述 高压开关,尤其是在混合集成电路。 特点 世界标准的微型封装 高压

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SC3554
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