集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 30V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 25V |
集电极连续输出电流IC
Collector Current(IC) | 300mA/0.3A |
截止频率fT
Transtion Frequency(fT) | 250MHz |
直流电流增益hFE
DC Current Gain(hFE) | 800~3200 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 500mV/0.5V |
耗散功率Pc
Power Dissipation | 200mW/0.2W |
| Description & Applications | NPN epitaxial planar Silicon Transistors Applications Low frequency, general-purpose amplifiers,drives, muting circuits Features Low Vce High DC current gain High VEBO |
| 描述与应用 | NPN外延平面硅晶体管 应用 低频率，通用放大器，驱动器，静音电路 特点 低Vce 高直流电流增益 高VEBO |