集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 60V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 300V |
集电极连续输出电流IC
Collector Current(IC) | 200mA/0.2A |
截止频率fT
Transtion Frequency(fT) | 200MHz |
直流电流增益hFE
DC Current Gain(hFE) | 120~240 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 300mV/0.3V |
耗散功率Pc
Power Dissipation | 500mW/0.5W |
| Description & Applications | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) High Frequency Amplifier Applications Video Amplifier Applications High Speed Switching Applications High transition frequency: fT = 200 MHz (typ.) Low collector output capacitance: Cob = 3.5 pF (typ.) Complementary to 2SA1483 |
| 描述与应用 | 东芝晶体管的硅NPN外延式（PCT的进程） 高频率放大器应用 视频放大器的应用 高速开关应用 高转换频率：FT =200兆赫 低集电极输出电容：COB=3.5 pF 与2SA1483互补 |