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Parameters:

  • Model:2SC4080E-TD
  • Manufacturer:HUABAN
  • Date Code:05+nopb 05+ROHS
  • Standard Package:1000
  • Min Order:10
  • Mark/silk print/code/type:CIE
  • Package:SOT-89/PCP

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
200V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
200V
集电极连续输出电流IC
Collector Current(IC)
100mA/0.1A
截止频率fT
Transtion Frequency(fT)
400MHz
直流电流增益hFE
DC Current Gain(hFE)
100~200
管压降VCE(sat)
Collector-Emitter Saturation Voltage
1V
耗散功率Pc
Power Dissipation
500mW/0.5W
Description & ApplicationsPNP/NPN Epitaxial planar Silicon transistor High-Frequency Amp Wide-Band Amp Applications High fT High breakdown voltage Small reverse transfer capacitance and excellent high-frequency characteristic Adoption of FBET process
描述与应用PNP/ NPN外延平面硅晶体管 高频放大器 宽带放大器应用 高FT 高击穿电压 小的反向传输电容和优良的高频特性 采纳FBET过程

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2SC4080E-TD
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