集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 200V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 200V |
集电极连续输出电流IC
Collector Current(IC) | 100mA/0.1A |
截止频率fT
Transtion Frequency(fT) | 400MHz |
直流电流增益hFE
DC Current Gain(hFE) | 100~200 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 1V |
耗散功率Pc
Power Dissipation | 500mW/0.5W |
| Description & Applications | PNP/NPN Epitaxial planar Silicon transistor High-Frequency Amp Wide-Band Amp Applications High fT High breakdown voltage Small reverse transfer capacitance and excellent high-frequency characteristic Adoption of FBET process |
| 描述与应用 | PNP/ NPN外延平面硅晶体管 高频放大器 宽带放大器应用 高FT 高击穿电压 小的反向传输电容和优良的高频特性 采纳FBET过程 |