集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
30V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
19V |
集电极连续输出电流IC
Collector Current(IC) |
50mA |
截止频率fT
Transtion Frequency(fT) |
1.1GHz |
直流电流增益hFE
DC Current Gain(hFE) |
56~120 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage |
200mV/0.2V |
耗散功率Pc
Power Dissipation |
100mW/0.1W |
| Description & Applications |
Epitaxial planar NPN Silicon transistor RF Amplifier High transition frequency Low output capacitance Low base resistance for high gain and excellent noise response |
| 描述与应用 |
外延平面NPN硅晶体管 射频放大器 高转换频率 低输出电容 低基极电阻和良好的噪声响应 |