集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 30V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 20V |
集电极连续输出电流IC
Collector Current(IC) | 8A |
截止频率fT
Transtion Frequency(fT) | 250MHz |
直流电流增益hFE
DC Current Gain(hFE) | 140~280 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 220mV/0.22V |
耗散功率Pc
Power Dissipation | 1W |
| Description & Applications | NPN epitaxial planer Silicon transistor High-Current Switching Applications Adoption of FBET,MBIT processes Low saturation voltage Fast switching speed Large current capacity Small and slim package making it easy to make 2SC4306-used set smaller |
| 描述与应用 | NPN外延刨床硅的晶体管 高电流开关应用 采纳FBET，MBIT进程 低饱和电压 开关速度快 大电流容量 小型和超薄封装，使2SC4306应用设置容易更小 |