集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 20V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 10V |
集电极连续输出电流IC
Collector Current(IC) | 2A |
截止频率fT
Transtion Frequency(fT) | 260MHz |
直流电流增益hFE
DC Current Gain(hFE) | 1500 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 110mV/0.11V |
耗散功率Pc
Power Dissipation | 500mW/0.5W |
| Description & Applications | NPN epitaxial planer Silicon transistor High-hFE,AF Amp Applications Adoption of MBIT process High DC current gain Large current capacity Low collector to emitter saturation voltage |
| 描述与应用 | NPN外延刨床硅的晶体管 高HFE，AF放大器应用 通过MBIT过程 高直流电流增益 电流容量大 集电极到发射极饱和电压低 |