集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 30V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 19V |
集电极连续输出电流IC
Collector Current(IC) | 50mA |
截止频率fT
Transtion Frequency(fT) | 1.1GHz |
直流电流增益hFE
DC Current Gain(hFE) | 56~120 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 100mV/0.1V |
耗散功率Pc
Power Dissipation | 150mW-200mW |
| Description & Applications | epitaxial planer NPN Silicon transistor RF Amplifier High transition frequency: fT-1.1GHz Low collector to base time constant and high gain Excellent noise response |
| 描述与应用 | 外延刨床NPN硅晶体管 射频放大器 高转换频率：FT-1.1GHz 集电极到基极的时间常数时间低以及高增益 出色的噪声响应 |