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Parameters:

  • Model:2SC4783
  • Manufacturer:HUABAN
  • Date Code:05+ 05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:L6
  • Package:SOT-523

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
60V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
50V
集电极连续输出电流IC
Collector Current(IC)
100mA/0.1A
截止频率fT
Transtion Frequency(fT)
250MHz
直流电流增益hFE
DC Current Gain(hFE)
200~400
管压降VCE(sat)
Collector-Emitter Saturation Voltage
150mV/0.15V
耗散功率Pc
Power Dissipation
200mW/0.2W
Description & Applications Features • NPN SILICON EPITAXIAL TRANSISTOR • High DC current gain: hFE2 = 200 TYP. • High voltage: VCEO = 50 V
描述与应用 特点 •NPN硅外延晶体管 •高直流电流增益:HFE2=200 TYP。 •高电压:VCEO= 50 V

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SC4783
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