集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 15V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 8V |
集电极连续输出电流IC
Collector Current(IC) | 50mA |
截止频率fT
Transtion Frequency(fT) | 13.5GHz |
直流电流增益hFE
DC Current Gain(hFE) | 50~160 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | |
耗散功率Pc
Power Dissipation | 150mW/0.15W |
| Description & Applications | Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz Typ • High gain, low noise figure PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz |
| 描述与应用 | NPN硅外延 应用 VHF/ UHF宽频带放大器 特点 •高增益带宽积 FT =13.5 GHz的典型 •高增益，低噪声系数 PG=18 dB（典型值），NF= 1.1 dB（典型值）在f=900兆赫 |