集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 50V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 6V |
集电极连续输出电流IC
Collector Current(IC) | 1A |
截止频率fT
Transtion Frequency(fT) | 130MHz |
直流电流增益hFE
DC Current Gain(hFE) | 900~1800 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 150mV/0.15V |
耗散功率Pc
Power Dissipation | 500mW/0.5W |
| Description & Applications | relay drive power supply application silicon NPN epitaxial type description 2SC5209 is a silicon NPN epitaxial type transistor. it designed with high voltage,high collector current and hig hFE features * high voltage Vceo=50V * small collector to emitter saturation voltage * high hFE hFE=600~1800 * small package for mounting application audio machine，VCR，relay drive of other electronic machine，power supply |
| 描述与应用 | 继电器驱动电源中的应用 NPN硅外延型 描述 2SC5209硅NPN外延型晶体管。它的设计与高电压，高集电极电流和较高HFE 特点 *高电压VCEO= 50V *小集电极到发射极饱和电压 *高HFE HFE=600〜1800 *安装包小 应用 音频机，录像机，继电器驱动等电子整机，电源 |