集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 5V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 3V |
集电极连续输出电流IC
Collector Current(IC) | 10mA |
截止频率fT
Transtion Frequency(fT) | 17GHz |
直流电流增益hFE
DC Current Gain(hFE) | 70~140 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | |
耗散功率Pc
Power Dissipation | 30mW |
| Description & Applications | NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURE • High fT 17 GHz TYP. • High gain |S21e|*2= 15.5 dB TYP. @f = 2 GHz, VCE = 2 V, IC =7mA • NF = 1.1 dB, @f = 2 GHz VCE = 2 V, IC=1mA • 6-pin Small Mini Mold Package |
| 描述与应用 | NPN外延硅晶体管 微波高增益放大 特写 •高FT 17 GHz的TYP。 •高增益 | S21E|* 2 =15.5 dB典型值。 @ F =2 GHz时，VCE= 2 V，IC=7毫安 •NF= 1.1 dB时，F =2 GHz的VCE= 2 V，IC=1MA •6针小型微型模具包装 |