集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 9.0V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 5.5V |
集电极连续输出电流IC
Collector Current(IC) | 100mA/0.1A |
截止频率fT
Transtion Frequency(fT) | 5.5GHz |
直流电流增益hFE
DC Current Gain(hFE) | 100~160 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | |
耗散功率Pc
Power Dissipation | 200mW/0.2W |
| Description & Applications | NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation, low phase distortion • Ideal for OSC applications • Flat-lead 3-pin thin-type ultra super minimold package |
| 描述与应用 | NPN硅RF晶体管 高频低噪声 扁平引线3引脚超薄型超超迷你 特点 •低电压工作，低相位失真 •OSC申请非常适于 •扁平引线3引脚薄型超超迷你包装 |