集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 8V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 2.3V |
集电极连续输出电流IC
Collector Current(IC) | 35mA |
截止频率fT
Transtion Frequency(fT) | |
直流电流增益hFE
DC Current Gain(hFE) | 200~400 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | |
耗散功率Pc
Power Dissipation | 80mW |
| Description & Applications | NPN SILICON GERMANIUM RF TRANSISTOR LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) Document No. PU10212EJ02V0DS (2nd edition) Date Published May 2003 CP(K) Printed in Japan The mark ! shows major revised points. NEC Compound Semiconductor Devices 2001, 2003 FEATURES • Ideal for low noise ⋅ high-gain amplification NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • Maximum stable power gain: MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz • SiGe technology (fT = 60 GHz, fmax = 60 GHz) • Flat-lead 4-pin thin-type super minimold (M04) package |
| 描述与应用 | NPN硅锗射频晶体管 低噪声⋅高增益放大 扁平引线超薄型4引脚超级迷你（M04） 号文件PU10212EJ02V0DS的（第2版） 发布日期2003年5月CP（K） 在日本印刷 大关！表示主要修改点。 NEC化合物半导体器件2001年，2003年 特点 •适用于低噪音⋅高增益放大 NF= 0.9 dB。 @ VCE= 2 V，IC =5毫安，F =2吉赫 •最大功率增益稳定：味精=20.0 dB。 @ VCE= 2 V，IC=20 mA时，F =2吉赫 •SiGe技术（FT =60千兆赫，FMAX =60千兆赫） •4-pin薄型扁平引线型超级迷你（M04）包 |