集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 100V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 80V |
集电极连续输出电流IC
Collector Current(IC) | 1A |
截止频率fT
Transtion Frequency(fT) | 160MHz |
直流电流增益hFE
DC Current Gain(hFE) | 135~270 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 150mV/0.15V |
耗散功率Pc
Power Dissipation | 2W |
| Description & Applications | Silicon NPN epitaxial transistors description 2SD1007 is designed for audio frequency power amplifier application , especially in hybrid integrated circuits Features * high collector to emitter voltage * world standard miniature package * excellent DC current gain linearity |
| 描述与应用 | NPN硅外延晶体管 描述 2SD1007是专为音频功放中的应用， 特别是在混合集成电路 特点 *高集电极到发射极电压 *世界标准的微型封装 *卓越的DC电流增益线性 |