集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 100V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 100V |
集电极连续输出电流IC
Collector Current(IC) | 20mA |
截止频率fT
Transtion Frequency(fT) | 100MHz |
直流电流增益hFE
DC Current Gain(hFE) | 600~1200 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 50mV |
耗散功率Pc
Power Dissipation | 200mW/0.2W |
| Description & Applications | Silicon NPN epitaxial planer type low-frequency amplification Features * High foward current transfer ratio hFE. * Low collector to emitter saturation voltage VCE(sat) * High emitter to base voltage VEBO. * Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. |
| 描述与应用 | NPN硅外延平面型 低频放大 特点 *高FOWARD电流传输比HFE。 *低集电极到发射极饱和电压VCE（SAT） *高发射器基极电压VEBO。 *迷你型包装，使瘦身的设备和 通过自动插入磁带包装和杂志 包装。 |