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Parameters:

  • Model:2SD1622R
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:1000
  • Min Order:10
  • Mark/silk print/code/type:DER
  • Package:SOT-89/PCP

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
60V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
50V
集电极连续输出电流IC
Collector Current(IC)
1A
截止频率fT
Transtion Frequency(fT)
150MHz
直流电流增益hFE
DC Current Gain(hFE)
100~200
管压降VCE(sat)
Collector-Emitter Saturation Voltage
120mV/0.12V
耗散功率Pc
Power Dissipation
500mW/0.5W
Description & ApplicationsSilicon NPN epitaxial planer type darlington low frequency power amp amplification Features * very small size making it easy to provide high density hybird ics * adoption of FBET processes
描述与应用NPN硅外延平面型达林顿 低频功率放大器放大 特点 *非常小的尺寸使其易于提供高密度摄录ICS *采用的FBET过程

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SD1622R
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