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Parameters:

  • Model:2SD1782K T146R
  • Manufacturer:HUABAN
  • Date Code:05+nopb100 05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:AJR
  • Package:SOT-23/SC-59/SMT3

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
80V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
80V
集电极连续输出电流IC
Collector Current(IC)
500mA/0.5A
截止频率fT
Transtion Frequency(fT)
180MHz
直流电流增益hFE
DC Current Gain(hFE)
180~390
管压降VCE(sat)
Collector-Emitter Saturation Voltage
200mV/0.2V
耗散功率Pc
Power Dissipation
200mW/0.2W
Description & Applications Features * Low VCE(sat). VCE(sat) = 0.2V (Typ.) (IC / IB = 0.5A / 50mA) * High VCEO, VCEO = 80V Structure Epitaxial planar type NPN silicon transistor
描述与应用 特点 *低VCE(sat)的。 VCE(饱和)=0.2V (IC / IB= 0.5A/50MA) *高VCEO VCEO=80V 结构 外延平面型 NPN硅晶体管

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SD1782K T146R
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