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Parameters:

  • Model:2SD1963 T100S
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:1000
  • Min Order:10
  • Mark/silk print/code/type:DGS
  • Package:SOT-89/SC-62/MPT3

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
50V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
20V
集电极连续输出电流IC
Collector Current(IC)
3A
截止频率fT
Transtion Frequency(fT)
150MHz
直流电流增益hFE
DC Current Gain(hFE)
270~560
管压降VCE(sat)
Collector-Emitter Saturation Voltage
250mV/0.25V
耗散功率Pc
Power Dissipation
500mW/0.5W
Description & Applications Power Transistor (-50V, -3A) featrues low saturation voltage excellent DC current gain characteristics
描述与应用 功率晶体管(-50V,-3A) 特点 低饱和电压 出色的DC电流增益特性

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SD1963 T100S
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