集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
31V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
31V |
集电极连续输出电流IC
Collector Current(IC) |
2A |
截止频率fT
Transtion Frequency(fT) |
100MHz |
直流电流增益hFE
DC Current Gain(hFE) |
56~180 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage |
250mV/0.25V |
耗散功率Pc
Power Dissipation |
500mW/0.5W |
| Description & Applications |
*Power Transistor *features *Built-in zener diode between collector and base. *Zener diode has low voltage dispersion. *Strong protection against reverse power surges due to low loads. PC=2 W (on 40×40×0.7mm ceramic board) |
| 描述与应用 |
*功率晶体管 特点 *内置的集电极和基极之间的齐纳二极管。 *齐纳二极管具有低电压分散。 *强逆功率保护潮 低负荷。 PC=2 W（40×40×0.7毫米的陶瓷板） |