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Parameters:

  • Model:2SD2167 T100P
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:1000
  • Min Order:10
  • Mark/silk print/code/type:DLP
  • Package:SOT-89/SC-62/MPT3

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
31V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
31V
集电极连续输出电流IC
Collector Current(IC)
2A
截止频率fT
Transtion Frequency(fT)
100MHz
直流电流增益hFE
DC Current Gain(hFE)
56~180
管压降VCE(sat)
Collector-Emitter Saturation Voltage
250mV/0.25V
耗散功率Pc
Power Dissipation
500mW/0.5W
Description & Applications *Power Transistor *features *Built-in zener diode between collector and base. *Zener diode has low voltage dispersion. *Strong protection against reverse power surges due to low loads. PC=2 W (on 40×40×0.7mm ceramic board)
描述与应用 *功率晶体管 特点 *内置的集电极和基极之间的齐纳二极管。 *齐纳二极管具有低电压分散。 *强逆功率保护潮  低负荷。  PC=2 W(40×40×0.7毫米的陶瓷板)

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SD2167 T100P
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