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Parameters:

  • Model:2SD2537 T100V
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:1000
  • Min Order:10
  • Mark/silk print/code/type:DV
  • Package:SOT-89/SC-62/MPT3

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
30V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
25V
集电极连续输出电流IC
Collector Current(IC)
1.2A
截止频率fT
Transtion Frequency(fT)
200MHz
直流电流增益hFE
DC Current Gain(hFE)
820~2700
管压降VCE(sat)
Collector-Emitter Saturation Voltage
300mV/0.3V
耗散功率Pc
Power Dissipation
2W
Description & ApplicationsMedium Power Transistor (25V, 1.2A) Features 1) High DC current gain. 2) High emitter-base voltage. (VEBO=12V) 3) Low saturation voltage. (Max. VCE(sat)=0.3V at IC/IB=500mA/10mA)
描述与应用中等功率晶体管(25V,1.2A) 特点 1)高DC电流增益。 2)高发射基地电压。 (VEBO12V) 3)低饱和电压。 (最大VCE(sat)=0.3V IC / IB=500mA/10mA)

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2SD2537 T100V
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