2SD596 NPN Transistors(BJT) Vcbo=30V Vceo=25v Ic= 700mA/0.7A ft=170MHz HFE=110~180 Vce=220mV/0.22V SOT-23/SC-59 marking DV1|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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2SD596 NPN Transistors(BJT) Vcbo=30V Vceo=25v Ic= 700mA/0.7A ft=170MHz HFE=110~180 Vce=220mV/0.22V SOT-23/SC-59 marking DV1

Inventory:4300 Min Order：10

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Model：2SD596
Manufacturer：HUABAN
Date Code：05+ 05+
Standard Package：3000
Min Order：10
Mark/silk print/code/type：DV1
Package：SOT-23/SC-59

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)	30V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)	25V
集电极连续输出电流IC Collector Current(IC)	700mA/0.7A
截止频率fT Transtion Frequency(fT)	170MHz
直流电流增益hFE DC Current Gain(hFE)	110~180
管压降VCE（sat） Collector-Emitter Saturation Voltage	220mV/0.22V
耗散功率Pc Power Dissipation	200mW/0.2W
Description & Applications	micro package； high DC current gain，hFE：200
描述与应用	微封装; 高直流增益，HFE：200

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