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Parameters:

  • Model:2SJ305
  • Manufacturer:HUABAN
  • Date Code:12+ROHS 10+ROHS1058
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:KN
  • Package:SOT-23/SC-59

最大源漏极电压Vds
Drain-Source Voltage
-30V
最大栅源极电压Vgs(±)
Gate-Source Voltage
20V
最大漏极电流Id
Drain Current
-0.2A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
2.4Ω @-50mA,-2.5V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-0.5--1.5V
耗散功率Pd
Power Dissipation
200mW/0.2W
Description & ApplicationsTOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE HIGH SPEED SWITCHING APPLICATIONS ANALOG APPLICATIONS high input impedance low gate threshold voltage excellent switching times low drain-source on resistance small package complementary to 2SK2009
描述与应用东芝场效应晶体管的硅P沟道MOS型 高速开关应用 模拟应用 高输入阻抗 低栅极阈值电压 优良的开关时间 低漏源电阻 小包装 2SK2009互补

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SJ305
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